Category:
Power MOSFET
Dimensions:
10.67 x 4.83 x 9.65mm
Maximum Continuous Drain Current:
62 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
5V
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
70 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4600 pF @ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
21 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
330 W
Series:
HEXFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
9.65mm
Typical Turn-On Delay Time:
33 ns
Minimum Operating Temperature:
-40 °C
Maximum Drain Source Resistance:
26 mΩ
