Category:
Power MOSFET
Dimensions:
3.04 x 2.64 x 1.02mm
Maximum Continuous Drain Current:
4.2 A
Transistor Material:
Si
Width:
2.64mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Drain Source Resistance:
80 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
740 pF @ 15 V
Length:
3.04mm
Pin Count:
3
Forward Transconductance:
5.8S
Typical Turn-Off Delay Time:
54 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.25 W
Series:
HEXFET
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.02mm
Typical Turn-On Delay Time:
7.5 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
