Infineon IPD30N08S2-22 N-channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin TO-252

IPD30N08S2-22 Infineon  N-channel MOSFET, 30 A, 75 V OptiMOS, 3-Pin TO-252
IPD30N08S2-22
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.41mm
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
75 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
44 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1400 pF @ 25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
33 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Series:
OptiMOS
Maximum Gate Source Voltage:
±20 V
Height:
2.41mm
Typical Turn-On Delay Time:
13 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
21.5 mΩ
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This is N-channel MOSFET 30 A 75 V OptiMOS 3-Pin TO-252 manufactured by Infineon. The manufacturer part number is IPD30N08S2-22. It is of power mosfet category . The given dimensions of the product include 6.73 x 6.22 x 2.41mm. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 75 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-252. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 44 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1400 pf @ 25 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 33 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 125 w maximum power dissipation. The product optimos, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 2.41mm. In addition, it has a typical 13 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 21.5 mω maximum drain source resistance.

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IPD30N08S2-22, OptiMOS Power-Transistor(Technical Reference)

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