Category:
Power MOSFET
Dimensions:
5.15 x 6.15 x 1mm
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
6.15mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
TDSON
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
30 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2350 pF @ 25 V
Length:
5.15mm
Pin Count:
8
Typical Turn-Off Delay Time:
40 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
54 W
Series:
OptiMOS T2
Maximum Gate Source Voltage:
±16 V
Height:
1mm
Typical Turn-On Delay Time:
7 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
10.9 mΩ
