Category:
Power MOSFET
Dimensions:
10.363 x 4.572 x 15.95mm
Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
4.572mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
42 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3400 pF @ 20 V
Length:
10.36mm
Pin Count:
3
Forward Transconductance:
100S
Typical Turn-Off Delay Time:
23 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
94 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
±20 V
Height:
15.95mm
Typical Turn-On Delay Time:
16 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
4.1 mΩ
