Category:
Power MOSFET
Dimensions:
6.7 x 3.7 x 1.8mm
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Width:
3.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
4V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18.3 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
400 pF @ 25 V
Length:
6.7mm
Pin Count:
3+Tab
Typical Turn-Off Delay Time:
22.2 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.1 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
1.8mm
Typical Turn-On Delay Time:
8.1 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
75 mΩ
