Category:
Power MOSFET
Dimensions:
10.67 x 9.65 x 4.83mm
Maximum Continuous Drain Current:
426 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
3.9V
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
300 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
14240 pF @ 25 V
Length:
10.67mm
Pin Count:
3
Forward Transconductance:
150S
Typical Turn-Off Delay Time:
160 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
375 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
4.83mm
Typical Turn-On Delay Time:
32 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
1.2 mΩ
