Category:
Power MOSFET
Dimensions:
10.65 x 4.85 x 16.15mm
Maximum Continuous Drain Current:
43 A
Transistor Material:
Si
Width:
4.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
36 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2900 pF @ 30 V
Length:
10.65mm
Pin Count:
3
Forward Transconductance:
51S
Typical Turn-Off Delay Time:
20 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
33 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
±20 V
Height:
16.15mm
Typical Turn-On Delay Time:
15 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
9.3 mΩ
