Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
10 A, 12 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
2.55V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.65V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7.4 nC @ 4.5 V, 15 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
900 pF@ 10 V, 1860 pF@ 10 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
9.2 ns, 15 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
1.5mm
Typical Turn-On Delay Time:
6.3 (Q1) ns, 8.3 (Q2) ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
9 mΩ, 13 mΩ
