Category:
Power MOSFET
Dimensions:
5.35 x 6.35 x 1.1mm
Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Width:
6.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TDSON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
860 pF @ 50 V
Length:
5.35mm
Pin Count:
8
Typical Turn-Off Delay Time:
16 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
78 W
Series:
OptiMOS 2
Maximum Gate Source Voltage:
±20 V
Height:
1.1mm
Typical Turn-On Delay Time:
11 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
25.2 mΩ
