Category:
Power MOSFET
Dimensions:
10.36 x 4.57 x 15.95mm
Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Width:
4.57mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
150 °C
Channel Type:
N
Typical Input Capacitance @ Vds:
1900 pF @ 25 V
Length:
10.36mm
Pin Count:
3
Forward Transconductance:
15S
Typical Turn-Off Delay Time:
250 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Series:
SIPMOS
Maximum Gate Source Voltage:
±20 V
Height:
15.95mm
Typical Turn-On Delay Time:
30 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.6V
Maximum Drain Source Resistance:
130 mΩ
