Infineon IRFSL7534PBF N-channel MOSFET, 232 A, 60 V HEXFET, 3-Pin TO-262
Product Information
Category:
Power MOSFET
Dimensions:
10.67 x 4.83 x 9.65mm
Maximum Continuous Drain Current:
232 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
TO-262
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
186 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
10034 pF @ 25 V
Length:
10.67mm
Pin Count:
3
Forward Transconductance:
498S
Typical Turn-Off Delay Time:
118 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
294 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
9.65mm
Typical Turn-On Delay Time:
20 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.6 mΩ
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This is N-channel MOSFET 232 A 60 V HEXFET 3-Pin TO-262 manufactured by Infineon. The manufacturer part number is IRFSL7534PBF. It is of power mosfet category . The given dimensions of the product include 10.67 x 4.83 x 9.65mm. While 232 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of to-262. It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 186 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 10034 pf @ 25 v . Its accurate length is 10.67mm. It contains 3 pins. The forward transconductance is 498s . Whereas, its typical turn-off delay time is about 118 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 294 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 9.65mm. In addition, it has a typical 20 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 2.6 mω maximum drain source resistance.
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