Category:
Power MOSFET
Dimensions:
9.15 x 7.1 x 0.676mm
Maximum Continuous Drain Current:
375 A
Width:
7.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
250 V
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
38 mΩ
Package Type:
DirectFET L8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
110 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
6714 pF @ 25 V
Length:
9.15mm
Pin Count:
11
Typical Turn-Off Delay Time:
73.9 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Series:
DirectFET, HEXFET
Maximum Gate Source Voltage:
±30 V
Height:
0.676mm
Typical Turn-On Delay Time:
36.3 ns
Minimum Operating Temperature:
-55 °C
This is N-channel MOSFET Transistor 375 A 250 V DirectFET HEXFET 11-Pin DirectFET L8 manufactured by Infineon. The manufacturer part number is IRF7799L2TR1PBF. It is of power mosfet category . The given dimensions of the product include 9.15 x 7.1 x 0.676mm. While 375 a of maximum continuous drain current. Furthermore, the product is 7.1mm wide. The product offers single transistor configuration. It has a maximum of 250 v drain source voltage. The product carries 5v of maximum gate threshold voltage. It provides up to 38 mω maximum drain source resistance. The package is a sort of directfet l8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 110 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 6714 pf @ 25 v . Its accurate length is 9.15mm. It contains 11 pins. Whereas, its typical turn-off delay time is about 73.9 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 125 w maximum power dissipation. The product directfet, hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 0.676mm. In addition, it has a typical 36.3 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c.
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