Category:
Power MOSFET
Dimensions:
4.85 x 3.95 x 0.74mm
Maximum Continuous Drain Current:
24 A
Transistor Material:
Si
Width:
3.95mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
5V
Package Type:
DirectFET SB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
10 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
910 pF @ 25 V
Length:
4.85mm
Pin Count:
7
Typical Turn-Off Delay Time:
7.9 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
41 W
Series:
DirectFET, HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
0.74mm
Typical Turn-On Delay Time:
5.5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
31 mΩ
