Category:
Power MOSFET
Dimensions:
3.4 x 3.4 x 1mm
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TSDSON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
25 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2000 pF @ 30 V
Length:
3.4mm
Pin Count:
8
Typical Turn-Off Delay Time:
14 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
50 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
±20 V
Height:
1mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
11 mΩ
