ON Semiconductor HGTG27N120BN

HGTG27N120BN ON Semiconductor
ON Semiconductor

Product Information

Gate Charge:
270nC
Base Part Number:
HGTG27
Detailed Description:
IGBT NPT 1200V 72A 500W Through Hole TO-247
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
72A
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 27A
Operating Temperature:
-55°C ~ 150°C (TJ)
Supplier Device Package:
TO-247
Packaging:
Tube
Switching Energy:
2.2mJ (on), 2.3mJ (off)
Td (on/off) @ 25°C:
24ns/195ns
Power - Max:
500W
Customer Reference:
Input Type:
Standard
Package / Case:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
1200V
IGBT Type:
NPT
Test Condition:
960V, 27A, 3Ohm, 15V
Current - Collector Pulsed (Icm):
216A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is HGTG27N120BN. Features 270nc gate charge. Base Part Number: hgtg27. It features igbt npt 1200v 72a 500w through hole to-247. The product is available in through hole configuration. The maximum collector current includes 72a. Features 2.7v @ 15v, 27a. The product has -55°c ~ 150°c (tj) operating temperature range. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 2.2mj (on), 2.3mj (off). Td (on/off) value of 24ns/195ns. The maximum power of the product is 500w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 1200v. Features an IGBT npt type. Test condition included 960v, 27a, 3ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The on semiconductor's product offers user-desired applications.

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Mult Dev Assembly/DS Chg 6/Jan/2019(PCN Assembly/Origin)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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HGTG27N120BN, HGT5A27N120BN(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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