ON Semiconductor FGH40T65SQD-F155

FGH40T65SQD-F155 ON Semiconductor
ON Semiconductor

Product Information

Current - Collector (Ic) (Max):
80A
Detailed Description:
IGBT Trench Field Stop 650V 80A 238W Through Hole TO-247-3
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 40A
Td (on/off) @ 25°C:
16.4ns/86.4ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Type:
Standard
Package / Case:
TO-247-3
Gate Charge:
80nC
Base Part Number:
FGH40
Voltage - Collector Emitter Breakdown (Max):
650V
Reverse Recovery Time (trr):
31.8ns
Switching Energy:
138µJ (on), 52µJ (off)
Test Condition:
400V, 10A, 6Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
160A
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3
Packaging:
Tube
Power - Max:
238W
Customer Reference:
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FGH40T65SQD-F155. The maximum collector current includes 80a. It features igbt trench field stop 650v 80a 238w through hole to-247-3. Features 2.1v @ 15v, 40a. Td (on/off) value of 16.4ns/86.4ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-247-3. Features 80nc gate charge. Base Part Number: fgh40. The maximum collector emitter breakdown voltage of the product is 650v. It has a trr (reverse recovery time) of 31.8ns. Provide switching energy up to 138µj (on), 52µj (off). Test condition included 400v, 10a, 6ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 238w.

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Assembly 25/Aug/2020(PCN Assembly/Origin)
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FGH40T65SQD(Datasheets)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)

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