ON Semiconductor NXH50C120L2C2ES1G
Product Information
Input Capacitance (Cies) @ Vce:
11.89nF @ 20V
Base Part Number:
NXH50
Detailed Description:
IGBT Module Three Phase Inverter with Brake 1200V 50A 20mW Through Hole 26-DIP
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
50A
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 50A
Supplier Device Package:
26-DIP
Manufacturer Standard Lead Time:
51 Weeks
Voltage - Collector Emitter Breakdown (Max):
1200V
Packaging:
Tube
Operating Temperature:
-40°C ~ 150°C (TJ)
Power - Max:
20mW
Customer Reference:
Package / Case:
26-PowerDIP Module (1.199", 47.20mm)
Input:
Three Phase Bridge Rectifier
Configuration:
Three Phase Inverter with Brake
NTC Thermistor:
Yes
Current - Collector Cutoff (Max):
250µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NXH50C120L2C2ES1G. It holds 11.89nf @ 20v of input capacitance. Base Part Number: nxh50. It features igbt module three phase inverter with brake 1200v 50a 20mw through hole 26-dip. The product is available in through hole configuration. The maximum collector current includes 50a. Features 2.4v @ 15v, 50a. 26-dip is the supplier device package value. It has typical 51 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tube is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 20mw. Moreover, the product comes in 26-powerdip module (1.199", 47.20mm). Its input values include three phase bridge rectifier. The product is available in three phase inverter with brake configuration. NTC Thermistor - yes. In addition, 250µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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