Microsemi Corporation APT65GP60JDQ2
Product Information
Input Capacitance (Cies) @ Vce:
7.4nF @ 25V
Current - Collector (Ic) (Max):
130A
Detailed Description:
IGBT Module PT Single 600V 130A 431W Chassis Mount ISOTOP®
Configuration:
Single
Mounting Type:
Chassis Mount
Current - Collector Cutoff (Max):
1.25mA
Series:
POWER MOS 7®
Vce(on) (Max) @ Vge, Ic:
2.7V @ 15V, 65A
Supplier Device Package:
ISOTOP®
Voltage - Collector Emitter Breakdown (Max):
600V
Power - Max:
431W
Package / Case:
ISOTOP
Input:
Standard
IGBT Type:
PT
NTC Thermistor:
No
Manufacturer:
Microsemi Corporation
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FAQs
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Yes. Our products in Transistors - IGBTs - Modules category are shipped in lowest possible time.
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Yes. We ship APT65GP60JDQ2 Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APT65GP60JDQ2. It holds 7.4nf @ 25v of input capacitance. The maximum collector current includes 130a. It features igbt module pt single 600v 130a 431w chassis mount isotop®. The product is available in single configuration. The product is available in chassis mount configuration. In addition, 1.25ma is the maximum current at collector cutoff. The product power mos 7®, is a highly preferred choice for users. Features 2.7v @ 15v, 65a. isotop® is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 600v. The maximum power of the product is 431w. Moreover, the product comes in isotop. Its input values include standard. Features an IGBT pt type. NTC Thermistor - no. The microsemi corporation's product offers user-desired applications.
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