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This is manufactured by ON Semiconductor. The manufacturer part number is NXH100B120H3Q0STG. The product is available in dual configuration. The given dimensions of the product include 66.2 x 32.8 x 11.9mm. The product is available in surface mount configuration. Provides up to 186 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). In addition, the height is 11.9mm. Furthermore, the product is 32.8mm wide. Its accurate length is 66.2mm. It offers a maximum ±20v gate emitter voltage . The package is a sort of q0boost. Whereas, the minimum operating temperature of the product is -40 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 22 pins. The product offers dual transistor configuration. It holds 9.075nf @ 20v of input capacitance. Base Part Number: nxh100. It features igbt module trench field stop 2 independent 1200v 50a 186w chassis mount 22-pim/q0boost (55x32.5). The product is available in 2 independent configuration. The product is available in chassis mount configuration. The maximum collector current includes 50a. Features 2.3v @ 15v, 50a. 22-pim/q0boost (55x32.5) is the supplier device package value. It has typical 12 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tray is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 186w. Moreover, the product comes in module. Its input values include standard. Features an IGBT trench field stop type. NTC Thermistor - no. In addition, 200µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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