Microsemi Corporation APTGT35A120T1G
Product Information
Input Capacitance (Cies) @ Vce:
2.5nF @ 25V
Current - Collector (Ic) (Max):
55A
Detailed Description:
IGBT Module Trench Field Stop Half Bridge 1200V 55A 208W Chassis Mount SP1
Configuration:
Half Bridge
Mounting Type:
Chassis Mount
Current - Collector Cutoff (Max):
250µA
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 35A
Supplier Device Package:
SP1
Manufacturer Standard Lead Time:
36 Weeks
Voltage - Collector Emitter Breakdown (Max):
1200V
Operating Temperature:
-40°C ~ 150°C (TJ)
Power - Max:
208W
Package / Case:
SP1
Input:
Standard
IGBT Type:
Trench Field Stop
NTC Thermistor:
Yes
Manufacturer:
Microsemi Corporation
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FAQs
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You can order Microsemi Corporation brand products with APTGT35A120T1G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - IGBTs - Modules category are shipped in lowest possible time.
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Yes. We ship APTGT35A120T1G Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is APTGT35A120T1G. It holds 2.5nf @ 25v of input capacitance. The maximum collector current includes 55a. It features igbt module trench field stop half bridge 1200v 55a 208w chassis mount sp1. The product is available in half bridge configuration. The product is available in chassis mount configuration. In addition, 250µa is the maximum current at collector cutoff. Features 2.1v @ 15v, 35a. sp1 is the supplier device package value. It has typical 36 weeks of manufacturer standard lead time. The maximum collector emitter breakdown voltage of the product is 1200v. The product has -40°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 208w. Moreover, the product comes in sp1. Its input values include standard. Features an IGBT trench field stop type. NTC Thermistor - yes. The microsemi corporation's product offers user-desired applications.
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