Infineon Technologies BSC091N03MSCGATMA1
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
Rds On (Max) @ Id, Vgs:
9.1mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Power Dissipation (Max):
2.5W (Ta), 28W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1500 pF @ 15 V
Mounting Type:
Surface Mount
Series:
SIPMOS®
Supplier Device Package:
PG-TDSON-8-6
Current - Continuous Drain (Id) @ 25°C:
12A (Ta), 44A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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You can order Infineon Technologies brand products with BSC091N03MSCGATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET22550974 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET22550974.
Yes. We ship BSC091N03MSCGATMA1 Internationally to many countries around the world.
This is manufactured by Infineon Technologies. The manufacturer part number is BSC091N03MSCGATMA1. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. The maximum gate charge and given voltages include 20 nc @ 10 v. It has a maximum Rds On and voltage of 9.1mohm @ 30a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 2.5w (ta), 28w (tc). The product's input capacitance at maximum includes 1500 pf @ 15 v. The product is available in surface mount configuration. The product sipmos®, is a highly preferred choice for users. pg-tdson-8-6 is the supplier device package value. The continuous current drain at 25°C is 12a (ta), 44a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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