Rohm Semiconductor SCT3022ALHRC11

SCT3022ALHRC11 Rohm Semiconductor
Rohm Semiconductor

Product Information

Detailed Description:
N-Channel 650V 93A (Tc) 339W Through Hole TO-247N
Vgs(th) (Max) @ Id:
5.6V @ 18.2mA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-247-3
Base Part Number:
SCT3022
Gate Charge (Qg) (Max) @ Vgs:
133nC @ 18V
Rds On (Max) @ Id, Vgs:
28.6mOhm @ 36A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds:
2208pF @ 500V
Mounting Type:
Through Hole
Series:
Automotive, AEC-Q101
Supplier Device Package:
TO-247N
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
93A (Tc)
Customer Reference:
Power Dissipation (Max):
339W
Technology:
SiCFET (Silicon Carbide)
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This is manufactured by Rohm Semiconductor. The manufacturer part number is SCT3022ALHRC11. It features n-channel 650v 93a (tc) 339w through hole to-247n. The typical Vgs (th) (max) of the product is 5.6v @ 18.2ma. The product has 175°c (tj) operating temperature range. Moreover, the product comes in to-247-3. Base Part Number: sct3022. The maximum gate charge and given voltages include 133nc @ 18v. It has a maximum Rds On and voltage of 28.6mohm @ 36a, 18v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v. The rohm semiconductor's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is +22v, -4v. The product's input capacitance at maximum includes 2208pf @ 500v. The product is available in through hole configuration. The product automotive, aec-q101, is a highly preferred choice for users. to-247n is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 93a (tc). The product carries maximum power dissipation 339w. This product use sicfet (silicon carbide) technology.

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SCT2080KEHR(Datasheets)
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SCT PPAP Statement(Other Related Documents)

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