Manufacturer Standard Lead Time:
7 Weeks
Detailed Description:
N-Channel 60V 14.9A (Ta), 82A (Tc) 3.1W (Ta), 96W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
70nC @ 10V
Rds On (Max) @ Id, Vgs:
7.1 mOhm @ 41A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
3850pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
14.9A (Ta), 82A (Tc)
Power Dissipation (Max):
3.1W (Ta), 96W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
NVD5863NLT4G-VF01CT
NVD5863NLT4GOSCT
NVD5863NLT4GOSCT-ND
