ON Semiconductor FQU5N60CTU

FQU5N60CTU ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
37 Weeks
Detailed Description:
N-Channel 600V 2.8A (Tc) 2.5W (Ta), 49W (Tc) Through Hole I-PAK
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Base Part Number:
FQU5N60
Gate Charge (Qg) (Max) @ Vgs:
19nC @ 10V
Rds On (Max) @ Id, Vgs:
2.5Ohm @ 1.4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
670pF @ 25V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
I-PAK
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
2.8A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 49W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FQU5N60CTU. It has typical 37 weeks of manufacturer standard lead time. It features n-channel 600v 2.8a (tc) 2.5w (ta), 49w (tc) through hole i-pak. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. Base Part Number: fqu5n60. The maximum gate charge and given voltages include 19nc @ 10v. It has a maximum Rds On and voltage of 2.5ohm @ 1.4a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 670pf @ 25v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. i-pak is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 2.8a (tc). The product carries maximum power dissipation 2.5w (ta), 49w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Assembly Chg 20/Dec/2019(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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Passivation Material 26/June/2007(PCN Design/Specification)
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FQD5N60C, FQU5N60C(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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FAQs

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Yes. We ship FQU5N60CTU Internationally to many countries around the world.