ON Semiconductor FDP027N08B-F102

FDP027N08B-F102 ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
49 Weeks
Detailed Description:
N-Channel 80V 120A (Tc) 246W (Tc) Through Hole TO-220-3
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
FDP027
Gate Charge (Qg) (Max) @ Vgs:
178nC @ 10V
Rds On (Max) @ Id, Vgs:
2.7mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
80V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
13530pF @ 40V
Mounting Type:
Through Hole
Series:
PowerTrench®
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Customer Reference:
Power Dissipation (Max):
246W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDP027N08B-F102. It has typical 49 weeks of manufacturer standard lead time. It features n-channel 80v 120a (tc) 246w (tc) through hole to-220-3. The typical Vgs (th) (max) of the product is 4.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Base Part Number: fdp027. The maximum gate charge and given voltages include 178nc @ 10v. It has a maximum Rds On and voltage of 2.7mohm @ 100a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 80v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 13530pf @ 40v. The product is available in through hole configuration. The product powertrench®, is a highly preferred choice for users. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 120a (tc). The product carries maximum power dissipation 246w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Mold Chg 28/Oct/2019(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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FDP027N08B_F102(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Mult Device Part Number Chg 30/May/2017(PCN Part Number)

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