ON Semiconductor FDMS86350ET80

FDMS86350ET80 ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
31 Weeks
Detailed Description:
N-Channel 80V 25A (Ta), 198A (Tc) 3.3W (Ta), 187W (Tc) Surface Mount Power56
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
FDMS86350
Gate Charge (Qg) (Max) @ Vgs:
155nC @ 10V
Rds On (Max) @ Id, Vgs:
2.4mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
8V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
80V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
8030pF @ 40V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
Power56
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
25A (Ta), 198A (Tc)
Customer Reference:
Power Dissipation (Max):
3.3W (Ta), 187W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDMS86350ET80. It has typical 31 weeks of manufacturer standard lead time. It features n-channel 80v 25a (ta), 198a (tc) 3.3w (ta), 187w (tc) surface mount power56. The typical Vgs (th) (max) of the product is 4.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. Base Part Number: fdms86350. The maximum gate charge and given voltages include 155nc @ 10v. It has a maximum Rds On and voltage of 2.4mohm @ 25a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 8v, 10v. The on semiconductor's product offers user-desired applications. The product has a 80v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 8030pf @ 40v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. power56 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 25a (ta), 198a (tc). The product carries maximum power dissipation 3.3w (ta), 187w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Assembly 11/Mar/2020(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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FDMS86350ET80(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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