ON Semiconductor FDFMA3N109

FDFMA3N109 ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Schottky Diode (Isolated)
Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 30V 2.9A (Tc) 1.5W (Ta) Surface Mount 6-MicroFET (2x2)
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-VDFN Exposed Pad
Base Part Number:
FDFMA3
Gate Charge (Qg) (Max) @ Vgs:
3nC @ 4.5V
Rds On (Max) @ Id, Vgs:
123mOhm @ 2.9A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
220pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
6-MicroFET (2x2)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.9A (Tc)
Customer Reference:
Power Dissipation (Max):
1.5W (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDFMA3N109. The FET features of the product include schottky diode (isolated). It has typical 12 weeks of manufacturer standard lead time. It features n-channel 30v 2.9a (tc) 1.5w (ta) surface mount 6-microfet (2x2). The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-vdfn exposed pad. Base Part Number: fdfma3. The maximum gate charge and given voltages include 3nc @ 4.5v. It has a maximum Rds On and voltage of 123mohm @ 2.9a, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 220pf @ 15v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. 6-microfet (2x2) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2.9a (tc). The product carries maximum power dissipation 1.5w (ta). This product use mosfet (metal oxide) technology.

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Qualify 2nd supplier 13/Aug/2020(PCN Assembly/Origin)
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FDFMA3N109(Datasheets)
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Marking Content 19/Nov/2013(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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