ON Semiconductor FDD5N50TM-WS

FDD5N50TM-WS ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
5 Weeks
Detailed Description:
N-Channel 500V 4A (Tc) 40W (Tc) Surface Mount D-Pak
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FDD5
Gate Charge (Qg) (Max) @ Vgs:
15nC @ 10V
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 2A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
500V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
640pF @ 25V
Mounting Type:
Surface Mount
Series:
UniFET™
Supplier Device Package:
D-Pak
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Customer Reference:
Power Dissipation (Max):
40W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDD5N50TM-WS. It has typical 5 weeks of manufacturer standard lead time. It features n-channel 500v 4a (tc) 40w (tc) surface mount d-pak. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: fdd5. The maximum gate charge and given voltages include 15nc @ 10v. It has a maximum Rds On and voltage of 1.4ohm @ 2a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 500v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 640pf @ 25v. The product is available in surface mount configuration. The product unifet™, is a highly preferred choice for users. d-pak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 4a (tc). The product carries maximum power dissipation 40w (tc). This product use mosfet (metal oxide) technology.

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FDD5N50(Datasheets)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Device Part Number Chg 30/May/2017(PCN Part Number)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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FAQs

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Yes. We ship FDD5N50TM-WS Internationally to many countries around the world.