Vishay SIHF5N50D-E3 N-channel MOSFET, 5.3 A, 500 V D Series, 3-Pin TO-220FP

Vishay

Product Information

Maximum Drain Source Voltage:
500 V
Typical Gate Charge @ Vgs:
10 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
30 W
Series:
D Series
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
9.8mm
Width:
4.83mm
Length:
10.63mm
Minimum Gate Threshold Voltage:
3V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
5.3 A
Transistor Material:
Si
Maximum Drain Source Resistance:
1.5 Ω
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 5.3 A 500 V D Series 3-Pin TO-220FP manufactured by Vishay. The manufacturer part number is SIHF5N50D-E3. It has a maximum of 500 v drain source voltage. With a typical gate charge at Vgs includes 10 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 30 w maximum power dissipation. The product d series, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 9.8mm. Furthermore, the product is 4.83mm wide. Its accurate length is 10.63mm. Whereas its minimum gate threshold voltage includes 3v. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 5.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 1.5 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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SiHF5N50D, D Series Power MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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