ON Semiconductor FCP650N80Z

FCP650N80Z ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
8 Weeks
Detailed Description:
N-Channel 800V 10A (Tc) 162W (Tc) Through Hole TO-220
Vgs(th) (Max) @ Id:
4.5V @ 800µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Base Part Number:
FCP650
Gate Charge (Qg) (Max) @ Vgs:
35nC @ 10V
Rds On (Max) @ Id, Vgs:
650mOhm @ 4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
800V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1565pF @ 100V
Mounting Type:
Through Hole
Series:
SuperFET® II
Supplier Device Package:
TO-220
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Customer Reference:
Power Dissipation (Max):
162W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FCP650N80Z. It has typical 8 weeks of manufacturer standard lead time. It features n-channel 800v 10a (tc) 162w (tc) through hole to-220. The typical Vgs (th) (max) of the product is 4.5v @ 800µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Base Part Number: fcp650. The maximum gate charge and given voltages include 35nc @ 10v. It has a maximum Rds On and voltage of 650mohm @ 4a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 800v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1565pf @ 100v. The product is available in through hole configuration. The product superfet® ii, is a highly preferred choice for users. to-220 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 10a (tc). The product carries maximum power dissipation 162w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Asembly Chg 7/May/2020(PCN Assembly/Origin)
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FCP650N80Z Datasheet(Datasheets)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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FAQs

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