ON Semiconductor FCH165N60E

FCH165N60E ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
41 Weeks
Detailed Description:
N-Channel 600V 23A (Tc) 227W (Tc) Through Hole TO-247
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Base Part Number:
FCH165
Gate Charge (Qg) (Max) @ Vgs:
75nC @ 10V
Rds On (Max) @ Id, Vgs:
165mOhm @ 11.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2434pF @ 380V
Mounting Type:
Through Hole
Series:
SuperFET® II
Supplier Device Package:
TO-247
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
23A (Tc)
Customer Reference:
Power Dissipation (Max):
227W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FCH165N60E. It has typical 41 weeks of manufacturer standard lead time. It features n-channel 600v 23a (tc) 227w (tc) through hole to-247. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. Base Part Number: fch165. The maximum gate charge and given voltages include 75nc @ 10v. It has a maximum Rds On and voltage of 165mohm @ 11.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 2434pf @ 380v. The product is available in through hole configuration. The product superfet® ii, is a highly preferred choice for users. to-247 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 23a (tc). The product carries maximum power dissipation 227w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Assembly/DS Chg 6/Jan/2019(PCN Assembly/Origin)
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FCH165N60E(Datasheets)
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Dimension/Color Change 24/Feb/2021(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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