Fairchild FDB33N25TM N-channel MOSFET, 33 A, 250 V UniFET, 3-Pin D2PAK
Product Information
Category:
Power MOSFET
Dimensions:
10.67 x 11.33 x 4.83mm
Maximum Continuous Drain Current:
33 A
Transistor Material:
Si
Width:
11.33mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
250 V
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
36.8 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1640 pF@ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
75 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
235 W
Series:
UniFET
Maximum Gate Source Voltage:
±30 V
Height:
4.83mm
Typical Turn-On Delay Time:
35 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
94 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
48 nC @ 10 V
Rds On (Max) @ Id, Vgs:
94mOhm @ 16.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
250 V
Vgs (Max):
±30V
Power Dissipation (Max):
235W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2135 pF @ 25 V
Mounting Type:
Surface Mount
Series:
UniFET™
Supplier Device Package:
D2PAK (TO-263)
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
Checking for live stock
FAQs
Yes. You can also search FDB33N25TM on website for other similar products.
We accept all major payment methods for all products including ET14100483. Please check your shopping cart at the time of order.
You can order Fairchild Semiconductor brand products with FDB33N25TM directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Fairchild FDB33N25TM N-channel MOSFET, 33 A, 250 V UniFET, 3-Pin D2PAK. You can also check on our website or by contacting our customer support team for further order details on Fairchild FDB33N25TM N-channel MOSFET, 33 A, 250 V UniFET, 3-Pin D2PAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14100483 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Fairchild Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14100483.
Yes. We ship FDB33N25TM Internationally to many countries around the world.
This is Fairchild N-channel MOSFET 33 A 250 V UniFET 3-Pin D2PAK manufactured by Fairchild Semiconductor. The manufacturer part number is FDB33N25TM. It is of power mosfet category . The given dimensions of the product include 10.67 x 11.33 x 4.83mm. While 33 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 11.33mm wide. The product offers single transistor configuration. It has a maximum of 250 v drain source voltage. The package is a sort of d2pak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 36.8 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1640 pf@ 25 v . Its accurate length is 10.67mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 75 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 235 w maximum power dissipation. The product unifet, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 4.83mm. In addition, it has a typical 35 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 94 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 48 nc @ 10 v. It has a maximum Rds On and voltage of 94mohm @ 16.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 250 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 235w (tc). The product's input capacitance at maximum includes 2135 pf @ 25 v. The product unifet™, is a highly preferred choice for users. d2pak (to-263) is the supplier device package value. The continuous current drain at 25°C is 33a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.