ON Semiconductor NTNS3A91PZT5G

NTNS3A91PZT5G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
13 Weeks
Detailed Description:
P-Channel 20V 223mA (Ta) 121mW (Ta) Surface Mount 3-XLLGA (0.62x0.62)
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-XFLGA
Base Part Number:
NTNS3
Gate Charge (Qg) (Max) @ Vgs:
1.1nC @ 4.5V
Rds On (Max) @ Id, Vgs:
1.6Ohm @ 100mA, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
41pF @ 15V
Mounting Type:
Surface Mount
Supplier Device Package:
3-XLLGA (0.62x0.62)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
223mA (Ta)
Customer Reference:
Power Dissipation (Max):
121mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NTNS3A91PZT5G. It has typical 13 weeks of manufacturer standard lead time. It features p-channel 20v 223ma (ta) 121mw (ta) surface mount 3-xllga (0.62x0.62). The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 3-xflga. Base Part Number: ntns3. The maximum gate charge and given voltages include 1.1nc @ 4.5v. It has a maximum Rds On and voltage of 1.6ohm @ 100ma, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 41pf @ 15v. The product is available in surface mount configuration. 3-xllga (0.62x0.62) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 223ma (ta). The product carries maximum power dissipation 121mw (ta). This product use mosfet (metal oxide) technology.

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NTNS3A91PZ(Datasheets)

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