ON Semiconductor NTD110N02RT4G

NTD110N02RT4G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
2 Weeks
Detailed Description:
N-Channel 24V 12.5A (Ta), 110A (Tc) 1.5W (Ta), 110W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
NTD110
Gate Charge (Qg) (Max) @ Vgs:
28nC @ 4.5V
Rds On (Max) @ Id, Vgs:
4.6mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
24V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3440pF @ 20V
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
12.5A (Ta), 110A (Tc)
Customer Reference:
Power Dissipation (Max):
1.5W (Ta), 110W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NTD110N02RT4G. It has typical 2 weeks of manufacturer standard lead time. It features n-channel 24v 12.5a (ta), 110a (tc) 1.5w (ta), 110w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: ntd110. The maximum gate charge and given voltages include 28nc @ 4.5v. It has a maximum Rds On and voltage of 4.6mohm @ 20a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 24v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 3440pf @ 20v. The product is available in surface mount configuration. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 12.5a (ta), 110a (tc). The product carries maximum power dissipation 1.5w (ta), 110w (tc). This product use mosfet (metal oxide) technology.

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Mult Devices 29/Aug/2017(PCN Assembly/Origin)
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NTD110N02R, STD110N02R(Datasheets)

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