Rohm Semiconductor RQ3E150MNTB1

RQ3E150MNTB1 Rohm Semiconductor
RQ3E150MNTB1
Rohm Semiconductor

Product Information

Base Part Number:
RQ3E150
Detailed Description:
N-Channel 30V 15A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
Input Capacitance (Ciss) (Max) @ Vds:
1100pF @ 15V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
Rds On (Max) @ Id, Vgs:
6.7mOhm @ 15A, 10V
Supplier Device Package:
8-HSMT (3.2x3)
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerVDFN
Power Dissipation (Max):
2W (Ta)
Current - Continuous Drain (Id) @ 25°C:
15A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RQ3E150MNTB1. Base Part Number: rq3e150. It features n-channel 30v 15a (ta) 2w (ta) surface mount 8-hsmt (3.2x3). The product's input capacitance at maximum includes 1100pf @ 15v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 20nc @ 10v. It has a maximum Rds On and voltage of 6.7mohm @ 15a, 10v. 8-hsmt (3.2x3) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-powervdfn. The product carries maximum power dissipation 2w (ta). The continuous current drain at 25°C is 15a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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