Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
6.4 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.2V
Package Type:
SOIC
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
48 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
3100 pF @ -16 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
110 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1.5mm
Typical Turn-On Delay Time:
25 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
20 mΩ
Manufacturer Standard Lead Time:
51 Weeks
Detailed Description:
P-Channel 20V 8.8A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Base Part Number:
NTMS10
Gate Charge (Qg) (Max) @ Vgs:
70nC @ 4.5V
Rds On (Max) @ Id, Vgs:
14mOhm @ 10A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
3640pF @ 16V
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
8.8A (Ta)
Customer Reference:
Power Dissipation (Max):
1.6W (Ta)
Technology:
MOSFET (Metal Oxide)
