ON Semiconductor NTD4858N-35G

NTD4858N-35G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
8 Weeks
Detailed Description:
N-Channel 25V 11.2A (Ta), 73A (Tc) 1.3W (Ta), 54.5W (Tc) Through Hole I-PAK
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-251-3 Stub Leads, IPak
Base Part Number:
NTD4858
Gate Charge (Qg) (Max) @ Vgs:
19.2nC @ 4.5V
Rds On (Max) @ Id, Vgs:
6.2mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1563pF @ 12V
Mounting Type:
Through Hole
Supplier Device Package:
I-PAK
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
11.2A (Ta), 73A (Tc)
Customer Reference:
Power Dissipation (Max):
1.3W (Ta), 54.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NTD4858N-35G. It has typical 8 weeks of manufacturer standard lead time. It features n-channel 25v 11.2a (ta), 73a (tc) 1.3w (ta), 54.5w (tc) through hole i-pak. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-251-3 stub leads, ipak. Base Part Number: ntd4858. The maximum gate charge and given voltages include 19.2nc @ 4.5v. It has a maximum Rds On and voltage of 6.2mohm @ 30a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 25v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1563pf @ 12v. The product is available in through hole configuration. i-pak is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 11.2a (ta), 73a (tc). The product carries maximum power dissipation 1.3w (ta), 54.5w (tc). This product use mosfet (metal oxide) technology.

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Mult Devices 29/Aug/2017(PCN Assembly/Origin)
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NTD4858N(Datasheets)

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