Rohm Semiconductor RQ6C065BCTCR

RQ6C065BCTCR Rohm Semiconductor
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
P-Channel 20V 6.5A (Tc) 1.25W (Tc) Surface Mount TSMT6 (SC-95)
Vgs(th) (Max) @ Id:
1.2V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Base Part Number:
RQ6C065
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 4.5V
Rds On (Max) @ Id, Vgs:
21mOhm @ 6.5A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
1520pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
TSMT6 (SC-95)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6.5A (Tc)
Customer Reference:
Power Dissipation (Max):
1.25W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is RQ6C065BCTCR. It has typical 16 weeks of manufacturer standard lead time. It features p-channel 20v 6.5a (tc) 1.25w (tc) surface mount tsmt6 (sc-95). The typical Vgs (th) (max) of the product is 1.2v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. Base Part Number: rq6c065. The maximum gate charge and given voltages include 22nc @ 4.5v. It has a maximum Rds On and voltage of 21mohm @ 6.5a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v. The rohm semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 1520pf @ 10v. The product is available in surface mount configuration. tsmt6 (sc-95) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 6.5a (tc). The product carries maximum power dissipation 1.25w (tc). This product use mosfet (metal oxide) technology.

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RQ6C065BC(Datasheets)
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TSMT6 TR Taping Spec(Datasheets)
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Transistor, MOSFET Flammability(Other Related Documents)
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TSMT6 Part Marking(Other Related Documents)
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Transistor, MOSFET Level 1 MSL(Environmental Information)
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Transistor Whisker Info(Environmental Information)

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