ON Semiconductor NVF5P03T3G

NVF5P03T3G ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
P-Channel 30V 3.7A (Ta) 1.56W (Ta) Surface Mount SOT-223 (TO-261)
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Base Part Number:
NVF5P03
Gate Charge (Qg) (Max) @ Vgs:
38nC @ 10V
Rds On (Max) @ Id, Vgs:
100mOhm @ 5.2A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
950pF @ 25V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
SOT-223 (TO-261)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3.7A (Ta)
Customer Reference:
Power Dissipation (Max):
1.56W (Ta)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by ON Semiconductor. The manufacturer part number is NVF5P03T3G. It features p-channel 30v 3.7a (ta) 1.56w (ta) surface mount sot-223 (to-261). The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. Base Part Number: nvf5p03. The maximum gate charge and given voltages include 38nc @ 10v. It has a maximum Rds On and voltage of 100mohm @ 5.2a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 950pf @ 25v. The product is available in surface mount configuration. The product automotive, aec-q101, is a highly preferred choice for users. sot-223 (to-261) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 3.7a (ta). The product carries maximum power dissipation 1.56w (ta). This product use mosfet (metal oxide) technology.

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Wire Bond 04/Dec/2020(PCN Assembly/Origin)
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N(T,V)F5P03T3G(Datasheets)
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Covering Tape/Material Chg 20/May/2016(PCN Packaging)

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