Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.3V
Package Type:
MCPH3
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.7 nC @ 4 V
Channel Type:
N
Length:
2mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.83mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
130 mΩ
Manufacturer Standard Lead Time:
9 Weeks
Detailed Description:
N-Channel 30V 4A (Ta) 1W (Ta) Surface Mount SC-70FL/MCPH3
Vgs(th) (Max) @ Id:
1.3V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
3-SMD, Flat Lead
Base Part Number:
MCH3474
Gate Charge (Qg) (Max) @ Vgs:
4.7nC @ 4.5V
Rds On (Max) @ Id, Vgs:
50mOhm @ 2A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
430pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
SC-70FL/MCPH3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Customer Reference:
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
