ON Semiconductor NTHD3101FT1G

NTHD3101FT1G ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Schottky Diode (Isolated)
Manufacturer Standard Lead Time:
8 Weeks
Detailed Description:
P-Channel 20V 3.2A (Tj) 1.1W (Ta) Surface Mount ChipFET™
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SMD, Flat Lead
Base Part Number:
NTHD3101
Gate Charge (Qg) (Max) @ Vgs:
7.4nC @ 4.5V
Rds On (Max) @ Id, Vgs:
80mOhm @ 3.2A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
680pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
ChipFET™
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3.2A (Tj)
Customer Reference:
Power Dissipation (Max):
1.1W (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NTHD3101FT1G. The FET features of the product include schottky diode (isolated). It has typical 8 weeks of manufacturer standard lead time. It features p-channel 20v 3.2a (tj) 1.1w (ta) surface mount chipfet™. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-smd, flat lead. Base Part Number: nthd3101. The maximum gate charge and given voltages include 7.4nc @ 4.5v. It has a maximum Rds On and voltage of 80mohm @ 3.2a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 680pf @ 10v. The product is available in surface mount configuration. chipfet™ is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 3.2a (tj). The product carries maximum power dissipation 1.1w (ta). This product use mosfet (metal oxide) technology.

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NTHD3101F(Datasheets)

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