ON Semiconductor SVD5803NT4G

SVD5803NT4G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
19 Weeks
Detailed Description:
N-Channel 40V 85A (Tc) 83W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
51nC @ 10V
Rds On (Max) @ Id, Vgs:
5.7 mOhm @ 50A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
3220pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
85A (Tc)
Power Dissipation (Max):
83W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
SVD5803NT4GOSCT
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is SVD5803NT4G. It has typical 19 weeks of manufacturer standard lead time. It features n-channel 40v 85a (tc) 83w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum gate charge and given voltages include 51nc @ 10v. It has a maximum Rds On and voltage of 5.7 mohm @ 50a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The on semiconductor's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 3220pf @ 25v. The product is available in surface mount configuration. dpak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 85a (tc). The product carries maximum power dissipation 83w (tc). This product use mosfet (metal oxide) technology. Alternative Names include svd5803nt4gosct.

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NVD5803NT4G 02/Sep/2016(PCN Assembly/Origin)
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NVD5803N(Datasheets)
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Mold Compound Update 25/Feb/2015(PCN Design/Specification)
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Mold Compound Revision 24/Apr/2015(PCN Design/Specification)

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