ON Semiconductor NVD3055L170T4G

NVD3055L170T4G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
51 Weeks
Detailed Description:
N-Channel 60V 9A (Ta) 1.5W (Ta), 28.5W (Tj) Surface Mount DPAK
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
NVD3055
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 5V
Rds On (Max) @ Id, Vgs:
170mOhm @ 4.5A, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
275pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Customer Reference:
Power Dissipation (Max):
1.5W (Ta), 28.5W (Tj)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NVD3055L170T4G. It has typical 51 weeks of manufacturer standard lead time. It features n-channel 60v 9a (ta) 1.5w (ta), 28.5w (tj) surface mount dpak. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: nvd3055. The maximum gate charge and given voltages include 10nc @ 5v. It has a maximum Rds On and voltage of 170mohm @ 4.5a, 5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±15v. The product's input capacitance at maximum includes 275pf @ 25v. The product is available in surface mount configuration. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 9a (ta). The product carries maximum power dissipation 1.5w (ta), 28.5w (tj). This product use mosfet (metal oxide) technology.

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Multi Devices 06/Jun/2017(PCN Assembly/Origin)
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NTD3055L170(Datasheets)

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