Rohm Semiconductor SH8KA1GZETB

SH8KA1GZETB Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
Standard
Base Part Number:
SH8KA1
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 4.5A (Ta) 2W (Ta) Surface Mount 8-SOP
Input Capacitance (Ciss) (Max) @ Vds:
125pf @ 15V
Gate Charge (Qg) (Max) @ Vgs:
3nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
30V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
80mOhm @ 4.5A, 10V
Supplier Device Package:
8-SOP
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
2W (Ta)
Current - Continuous Drain (Id) @ 25°C:
4.5A (Ta)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is SH8KA1GZETB. The FET features of the product include standard. Base Part Number: sh8ka1. It features mosfet array 2 n-channel (dual) 30v 4.5a (ta) 2w (ta) surface mount 8-sop. The product's input capacitance at maximum includes 125pf @ 15v. The maximum gate charge and given voltages include 3nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 30v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 80mohm @ 4.5a, 10v. 8-sop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 2w (ta). The continuous current drain at 25°C is 4.5a (ta). The rohm semiconductor's product offers user-desired applications.

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SH8KA1(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor SH8KA1GZETB and the best services all around the world ET18381937. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor SH8KA1GZETB, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

Our Rohm Semiconductor SH8KA1GZETB is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at SH8KA1GZETB. We stock a large inventory containing a wide range of variety ET18381937, differentiates by its unique features Rohm Semiconductor. We also have discounts for potential customers and let it until most of them avail from Rohm Semiconductor SH8KA1GZETB. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET18381937 from leading Rohm Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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