ON Semiconductor FDS8958A

ON Semiconductor

Product Information

Dimensions:
4.9 x 3.9 x 1.58mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.6 (Single) W, 2 (Dual) W
Height:
1.58mm
Width:
3.9mm
Length:
4.9mm
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+150 °C
Pin Count:
8
FET Feature:
Logic Level Gate
Base Part Number:
FDS89
Detailed Description:
Mosfet Array N and P-Channel 30V 7A, 5A 900mW Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
575pF @ 15V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
28mOhm @ 7A, 10V
Supplier Device Package:
8-SOIC
Manufacturer Standard Lead Time:
18 Weeks
Packaging:
Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs:
16nC @ 10V
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
900mW
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
7A, 5A
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

The FDS8958A is a dual MOSFET device combining an N‑channel and a P‑channel transistor in a single surface‑mount SO‑8 package. The N‑channel side supports up to 7 A at 30 V with an R_DS(on) of just 0.028 Ω at V_GS = 10 V; the P‑channel side is rated at –5 A, –30 V with R_DS(on) of 0.052 Ω at V_GS = –10 V. Optimised for low‑voltage, battery‑powered, or compact switching applications, this part delivers efficient power switching with minimal losses and fast switching speeds, making it a strong choice for high‑performance circuits.

What Makes the FDS8958A Transistor by ON Semiconductor Reliable and Efficient?

This MOSFET leverages ON Semiconductor’s (formerly Fairchild’s) PowerTrench® process to achieve very low on‑state resistance and strong switching performance, which translates into lower heat and higher efficiency. Additionally, the dual N‑ and P‑channel integration reduces component count in designs, which simplifies layout and can improve reliability by minimising solder joints and board area.

Standout Features of the FDS8958A:

  • Dual N‑channel (7 A, 30 V) and P‑channel (–5 A, –30 V) transistors in a single SO‑8 package.
  • Extremely low R_DS(on) for the N‑channel: 0.028 Ω at V_GS = 10 V; 0.040 Ω at V_GS = 4.5 V.
  • P‑channel R_DS(on) 0.052 Ω at V_GS = –10 V; 0.080 Ω at V_GS = –4.5 V.
  • Fast switching speed ideal for power‑efficient electronics. a
  • Surface‑mount SO‑8 package reducing board footprint and simplifying design.
  • Designed for low‑voltage, portable, or battery‑powered systems where efficiency and compactness matter.

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Datasheet FDS8958A(Technical Reference)
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Wafer Fab 02/Aug/2020(PCN Assembly/Origin)
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Mold Compound 12/Dec/2007(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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FDS8958A(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Mult MSL1 Pkg Chg 20/Dec/2018(PCN Packaging)

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