NP82N055PUG-E2-AZ N-Channel MOSFET, 82 A, 55 V, 3-Pin D2PAK Renesas
Product Information
Maximum Drain Source Voltage:
55 V
Typical Gate Charge @ Vgs:
106 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.8 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
4.45mm
Width:
9.15mm
Length:
10mm
Maximum Drain Source Resistance:
5 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
82 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is N-Channel MOSFET 82 A 55 V 3-Pin D2PAK Renesas manufactured by Renesas Electronics. The manufacturer part number is NP82N055PUG-E2-AZ. It has a maximum of 55 v drain source voltage. With a typical gate charge at Vgs includes 106 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.8 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 4.45mm. Furthermore, the product is 9.15mm wide. Its accurate length is 10mm. It provides up to 5 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 82 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
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