ON Semiconductor FDMD82100L

FDMD82100L ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
FDMD82
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 100V 7A 1W Surface Mount 12-Power3.3x5
Input Capacitance (Ciss) (Max) @ Vds:
1585pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:
24nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
PowerTrench®
Package / Case:
12-PowerWDFN
Rds On (Max) @ Id, Vgs:
19.5mOhm @ 7A, 10V
Supplier Device Package:
12-Power3.3x5
Manufacturer Standard Lead Time:
44 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
1W
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
7A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FDMD82100L. The FET features of the product include logic level gate. Base Part Number: fdmd82. It features mosfet array 2 n-channel (dual) 100v 7a 1w surface mount 12-power3.3x5. The product's input capacitance at maximum includes 1585pf @ 50v. The maximum gate charge and given voltages include 24nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in 12-powerwdfn. It has a maximum Rds On and voltage of 19.5mohm @ 7a, 10v. 12-power3.3x5 is the supplier device package value. It has typical 44 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 1w. The product has a 100v drain to source voltage. The continuous current drain at 25°C is 7a. The on semiconductor's product offers user-desired applications.

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Mult Dev Assembly 11/Mar/2020(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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FDMD82100L(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor FDMD82100L and the best services all around the world ET14519178. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor FDMD82100L, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor FDMD82100L is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDMD82100L. We stock a large inventory containing a wide range of variety ET14519178, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor FDMD82100L. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET14519178 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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