ON Semiconductor FDG6308P

FDG6308P ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
FDG6308
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 20V 600mA 300mW Surface Mount SC-88 (SC-70-6)
Input Capacitance (Ciss) (Max) @ Vds:
153pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
2.5nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Series:
PowerTrench®
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
400mOhm @ 600mA, 4.5V
Supplier Device Package:
SC-88 (SC-70-6)
Manufacturer Standard Lead Time:
10 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
300mW
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
600mA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FDG6308P. The FET features of the product include logic level gate. Base Part Number: fdg6308. It features mosfet array 2 p-channel (dual) 20v 600ma 300mw surface mount sc-88 (sc-70-6). The product's input capacitance at maximum includes 153pf @ 10v. The maximum gate charge and given voltages include 2.5nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 400mohm @ 600ma, 4.5v. sc-88 (sc-70-6) is the supplier device package value. It has typical 10 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 300mw. The product has a 20v drain to source voltage. The continuous current drain at 25°C is 600ma. The on semiconductor's product offers user-desired applications.

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Wafer Fab 02/Aug/2020(PCN Assembly/Origin)
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FDG6308P(Datasheets)
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Mold Compound 12/Dec/2007(PCN Design/Specification)
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Mold Compound 07/May/2008(PCN Design/Specification)
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Binary Year Code Marking 15/Jan/2014(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor FDG6308P and the best services all around the world ET14518911. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor FDG6308P, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor FDG6308P is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDG6308P. We stock a large inventory containing a wide range of variety ET14518911, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor FDG6308P. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET14518911 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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