ON Semiconductor NTMFD4901NFT1G

NTMFD4901NFT1G ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
NTMFD4901
Detailed Description:
Mosfet Array 2 N-Channel (Dual), Schottky 30V 10.3A, 17.9A 1.1W, 1.2W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Input Capacitance (Ciss) (Max) @ Vds:
1150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
9.7nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Drain to Source Voltage (Vdss):
30V
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 10A, 10V
Supplier Device Package:
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Manufacturer Standard Lead Time:
52 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual), Schottky
Customer Reference:
Power - Max:
1.1W, 1.2W
Current - Continuous Drain (Id) @ 25°C:
10.3A, 17.9A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTMFD4901NFT1G. The FET features of the product include logic level gate. Base Part Number: ntmfd4901. It features mosfet array 2 n-channel (dual), schottky 30v 10.3a, 17.9a 1.1w, 1.2w surface mount 8-dfn (5x6) dual flag (so8fl-dual-asymmetrical). The product's input capacitance at maximum includes 1150pf @ 15v. The maximum gate charge and given voltages include 9.7nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.2v @ 250µa. The product has a 30v drain to source voltage. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 6.5mohm @ 10a, 10v. 8-dfn (5x6) dual flag (so8fl-dual-asymmetrical) is the supplier device package value. It has typical 52 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual), schottky. The maximum power of the product is 1.1w, 1.2w. The continuous current drain at 25°C is 10.3a, 17.9a. The on semiconductor's product offers user-desired applications.

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Wafer Capacity Expansion 21/May/2015(PCN Assembly/Origin)
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NTMFD4901NF(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor NTMFD4901NFT1G and the best services all around the world ET12134771. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor NTMFD4901NFT1G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor NTMFD4901NFT1G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NTMFD4901NFT1G. We stock a large inventory containing a wide range of variety ET12134771, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor NTMFD4901NFT1G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET12134771 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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